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bzd27c11p thru bzd27c270p voltage regulator diodes voltage range 11 to 270 volts 0.8 watts power dissipation features ? silicon planar zener diodes ? low profile surface-mount package ? zener and surge curr ent specification ? low leakage current ? excellent stability ? high temperature soldering: 260 o c / 10 sec. at terminals mechanical data ? case: sub sma plastic ? packaging method: refer to package code ? marking code: as table ? weight: 10 mg (approx.) sub sma dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unle ss otherwise specified. maximum ratings type number symbol value units forward voltage @ if = 0.2a v f 1.2 v power dissipation tl=80 o c ta=25 o c (note 1) ptot 2.3 0.8 w non-repetitive peak pulse power dissipation 100us square pulse (note 2) p zsm 300 w non-repetitive peak pulse power dissipation 10/1000 us waveform (bzd27-c7v5p to bzd27-c100p) (note 2) p rsm 150 w non-repetitive peak pulse power dissipation 10/1000 us waveform (bzd27-110p to bzd27-c200p) (note 2) p rsm 100 w thermal resistance junction to ambient air (note 1) r ja 180 k /w thermal resistance junction to lead r jl 30 k /w operating and storage temperature range t j , t stg -65 to + 1 75 o c notes: 1. mounted on epoxy-glass pcb with 3 x 3 mm cu pads ( R 40um thick) 2. t j =25 o c prior to surge. 05.07.2006/rev.g
electrical characteristics (ta=25 o c unless otherwise noted) device test device marking current i r code i zt ua v r min. max. typ max. min max. ma max v bzd27c11p e2 10.4 11.6 4.0 7 0.05 0.10 50 4.0 8.2 bzd27c12p e3 11.4 12.7 4.0 7 0.05 0.10 50 3.0 9.1 bzd27c13p e4 12.4 14.1 5.0 10 0.05 0.10 50 2.0 10 bzd27c15p e5 13.8 15.6 5.0 10 0.05 0.10 25 1.0 11 bzd27c16p e6 15.3 17.1 6.0 15 0.06 0.11 25 1.0 12 bzd27c18p e7 16.8 19.1 6.0 15 0.06 0.11 25 1.0 13 bzd27c20p e8 18.8 21.2 6.0 15 0.06 0.11 25 1.0 15 bzd27c22p e9 20.8 23.3 6.0 15 0.06 0.11 25 1.0 16 bzd27c24p f0 22.8 25.6 7.0 15 0.06 0.11 25 1.0 18 bzd27c27p f1 25.1 28.9 7.0 15 0.06 0.11 25 1.0 20 bzd27c30p f2 28 32 8.0 15 0.06 0.11 25 1.0 22 bzd27c33p f3 31 35 8.0 15 0.06 0.11 25 1.0 24 bzd27c36p f4 34 38 21 40 0.06 0.11 10 1.0 27 bzd27c39p f5 37 41 21 40 0.06 0.11 10 1.0 30 bzd27c43p f6 40 46 24 45 0.07 0.12 10 1.0 33 bzd27c47p f7 44 50 24 45 0.07 0.12 10 1.0 36 bzd27c51p f8 48 54 25 60 0.07 0.12 10 1.0 39 bzd27c56p f9 52 60 25 60 0.07 0.12 10 1.0 43 bzd27c62p g0 58 66 25 80 0.08 0.13 10 1.0 47 bzd27c68p g1 64 72 25 80 0.08 0.13 10 1.0 51 bzd27c75p g2 70 79 30 100 0.08 0.13 10 1.0 56 bzd27c82p g3 77 87 30 100 0.08 0.13 10 1.0 62 bzd27c91p g4 85 96 60 200 0.08 0.13 5 1.0 68 bzd27c100p g5 94 106 60 200 0.09 0.13 5 1.0 75 bzd27c110p g6 104 116 80 250 0.09 0.13 5 1.0 82 bzd27c120p g7 114 127 80 250 0.09 0.13 5 1.0 91 bzd27c130p g8 124 141 110 300 0.09 0.13 5 1.0 100 bzd27c150p g9 138 156 130 300 0.09 0.13 5 1.0 110 bzd27c160p h0 153 171 150 350 0.09 0.13 5 1.0 120 bzd27c180p h1 168 191 180 400 0.09 0.13 5 1.0 130 bzd27c200p h2 188 212 200 500 0.09 0.13 5 1.0 150 bzd27c220p h3 208 233 350 750 0.09 0.13 2 1.0 160 bzd27c240p h4 228 256 400 850 0.09 0.13 2 1.0 180 bzd27c270p h5 251 289 450 1000 0.09 0.13 2 1.0 200 notes: 1. pulse test: tp Q 5ms. % / o c temperature coefficient alph z @ i z reverse voltage r everse current @ working voltage (note 1) v differential resistance r dif @ i z vz @ i zt
ratings and characteristic curves (bzd27c 11 p thru bzd27c270p) fig.1- forward current vs forward voltage fig.2- typ. diode capacitance vs reverse voltage fig.3- power dissipation vs ambient temperature fig.4- maximum pulse power dissipation vs zener voltage

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